A New Simulation Model for Integrated Hall Devices in CMOS Silicon Technology

摘要：

This paper presents a new simulation model for integrated Hall devices in CMOS silicon technology. Its behavioral equations and parameters are deduced and experimentally verified based on the fundamental theory of Hall devices and semiconductor physics. Magnetic field model and Hall model have been built in Verilog-A HDL, and they can be easily used in the simulation process of integrated Hall sensors. At the same time transient effects caused by wide operational range in temperature were taken into account in Verilog-A HDL and implemented in Spectre Circuit Simulator.

作者: Feng Ran Meihua Xu Zhangjin Chen

作者单位: Microelectronic Research & Development Center Shanghai University Shanghai, 200072, P.R. China Microelectronic Research & Development Center Shanghai University Shanghai, 200072, P.R. China;Schoo

会议类型: 国际会议

会议名称: Fourth International Conference on Impulsive and Hybrid Dynamical Systems(ICIHDS 2007)(第四届国际脉冲和混合动力系统学术会议)

会议地点: 南宁

会议语种:英文

在线出版日期: 2007-07-20（万方平台首次上网日期，不代表论文的发表时间）