Thickness and Temperature Dependence of Electrical Resistivity of n-type Bi2Te2.5Se0.5 Thermoelectric Thin Films

摘要：

N-type Bi2Te2.5 Se0.5 thermoelectric thin films with thickness in the range 50-400nm have been deposited by flash evaporation method on glass substrates at 473K. The structure, composition and morphology of the deposited thin films were carried out by Xray diffraction (XRD), energy-dispersive X-ray analysis (EDXA) and field emission scanning electron microscope (FE-SEM) respectively.The thickness and temperature dependence of electrical resistivity of the thin films were studied in the temperature range 300-350K.

关键词： electrical resistivity Bi2Te2.5Se0.5 thin film flash evaporation

作者: 段兴凯 杨君友 朱文 肖承京

作者单位: 华中科技大学材料科学与工程学院材料成形与模具技术国家重点实验室,湖北,武汉,430074

会议类型: 国际会议

会议名称: 第二届功能原料国际研讨会(The 2rd International Symposium on Functional Materials)

会议地点: 杭州

会议语种:英文

页码: 867-870

在线出版日期: 2007-05-16（万方平台首次上网日期，不代表论文的发表时间）