Selective deposition of metal oxide thin films on Si (100) surfaces by combination of metal-organic chemical vapour deposition and microcontact printing methods
TiO2, ZrO2 and HfO2 thin films have been deposited selectively using metal-organic chemical vapour deposition (MOCVD) technique with various single molecular precursors on Si (100) substrates which were patterned with octadecyltrichlorosilane (OTS) applied by microcontact printing (μCP). Titanium (IV) isopropoxide Ti(OiPr)4, bis-isopropoxy-bis-tertiarybutylacetoacetate zirconium Zr(OiPr)2(tbaoac)2 and hafnium tert-butoxide Hf(OtBu)4 were used for titanium dioxide (TiO2), hafnium and zirconium oxide (ZrO2 and HfO2) thin films, respectively. Selective depositions were successfully carried out in a home-made MOCVD system. All the deposited thin films had higher reactivity on bare silicon surfaces than OTS self-assembled monolayers (SAMs) deposited area. However, there was slightly different selective growth tendency on OTS deposited Si (100) surfaces. The selectivity tendency of the deposited thin films was revealed in order of TiO2, HfO2 and ZrO2. This tendency was explained by means of film growth rate, structures and molecular weight of precursors and acidity of transition metal of precursors.
B-C Kang D-Y Jung J-H Boo
Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Korea
国际会议
第二届功能原料国际研讨会(The 2rd International Symposium on Functional Materials)
杭州
英文
22-26
2007-05-16（万方平台首次上网日期，不代表论文的发表时间）