Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction

摘要：

GaSb epilayers grown on GaAs(001) vicinal substrate misoriented towards (111) plane were studied using high-resolution x-ray diffraction (HRXRD). The results show that GaSb epilayers exhibit positive crystallographic tilt and the distribution of 60° misfit dislocations (MDs) is imbalanced. The vicinal substrate also leads to the anisotropy of the mosaic structure, i. e. the lateral coherent lengths in 110 directions are larger than those in 110 directions. Furthermore, the full-width at half maximum (FWHM) of the off-axis peaks varies with the inclination angle, which is a result of different dislocation densities in the 111 glide planes.

作者: Yongxin Qiu Meicheng Li Yutian Wang Baoshun Zhang Yong Wang Guojun Liu Liancheng Zhao

作者单位: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China Institute of Semiconductors, CAS, Beijing, China Changchun University of Science and Technology, Changchun, China

会议类型: 国际会议

会议名称: 第二届功能原料国际研讨会(The 2rd International Symposium on Functional Materials)

会议地点: 杭州

会议语种:英文

页码: 27-30

在线出版日期: 2007-05-16（万方平台首次上网日期，不代表论文的发表时间）