Evanescent wave interference lithography for surface nano-structuring
Surface nano-structuring on photoresist beyond the diffraction limit has been investigated by using total internal reflection induced evanescence wave interference with a Lloyds mirror. The size of the patterns can be down to 80nm with the incident laser wavelength, λ, of 325nm, less than λ/4 resolution. This may be attributed to laser induced evanescent wave, which has a shorter wavelength than that of the incident laser in air. The energy distribution of evanescent wave interference patterns was studied theoretically. It shows good agreement with the experiments. This technique can be used to improve traditional laser interference lithography to get smaller feature sizes with a simple modification by putting a prism in front of the sample only.
Y Zhou M H Hong J Y H Fuh L Lu B S Lukiyanchuk
Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singa Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering D Data Storage Institute, 5 Engineering Drive 1, Singapore 117608
国际会议
第二届功能原料国际研讨会(The 2rd International Symposium on Functional Materials)
杭州
英文
35-37
2007-05-16（万方平台首次上网日期，不代表论文的发表时间）