Ferroelectric domain phenomena and growth kinetics of BaMgF4 single crystal by piezoresponse force microscopy
Static and dynamic domain behavior of ferroelectric fluoride BaMgF4 single crystal was investigated using high-resolution piezoresponse force microscopy. High domain wall anisotropy was found in the as-grown BaMgF4 crystal. Antiparallel domain wall strain phenomena due to defects across the domain boundary were directly observed. The lateral domain growth in the inhomogeneous AFM tip field revealed the activation mechanism of the domain wall motion.
Huarong Zeng Kiyoshi Shimamura Encarnacion G Villora Shunji Takekawa Kenji Kitamura
State Key Laboratory of High Performance Ceramic and Superfine Structures, Shanghai Institute of Cer Optronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 30
国际会议
第二届功能原料国际研讨会(The 2rd International Symposium on Functional Materials)
杭州
英文
108-111
2007-05-16(万方平台首次上网日期,不代表论文的发表时间)