Preparation and thermoelectric properties of Mg2Si1-xSnx

摘要：

Mg2Si1-xSnx (x=0.2, 0.4, 0.6 and 0.8) thermoelectric materials have been prepared by vacuum melting and melting/hot-pressing methods. The phase structures and electrical transport properties were measured. The relationships between electronic structures and electronic properties are discussed. X-ray diffraction (XRD) showed that the hot-pressed compounds were better formed. The electrical conductivity and Seebeck coefficient measurements showed that the properties of the compounds were dramatically affected by solid solubility. When x=0.2, the highest electrical conductivity resulted in the highest power factor of 1.32×10-3W m-1 K-2 at about 500K, while the highest value of Seebeck coefficient of -459μV K-1 was obtained at about 450K for x=0.6.

作者: Q Zhang T J Zhu A J Zhou H Yin X B Zhao

作者单位: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

会议类型: 国际会议

会议名称: 第二届功能原料国际研讨会(The 2rd International Symposium on Functional Materials)

会议地点: 杭州

会议语种:英文

页码: 123-126

在线出版日期: 2007-05-16（万方平台首次上网日期，不代表论文的发表时间）