Comparison of Li+-doping sources on properties of ZnO piezoelectric films

摘要：

Li+-doped zinc oxide (ZnO) piezoelectric thin films with preferred c-axis orientation along (002) were fabricated by the sol-gel method. The doping sources of Li+ were LiCl, Li2CO3 and their mixtures (LiCl+Li2CO3). Effects of the three doping sources and annealing temperature on the characteristics of preferred c-axis orientation degree and resistivity of ZnO films were investigated. It was found that the annealing temperature at which the ZnO film had good preferred c-axis orientation decreased from 600 to 550℃. The increase in ZnO resistivity by doping LiCl was larger than that by doping Li2CO3. The mixed-doped (5％LiCl+5％Li2CO3) ZnO film had good preferred c-axis orientation when annealed both at 550 and 600℃. The values of resistivity of the mixed-doped ZnO films were found to be 3×108 and 2×107Ωcm with annealing temperatures at 550 and 600℃, respectively.

作者: Jing Wang Wen Chen Minrui Wang

作者单位: School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, Ch School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116023, Ch Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Techn

会议类型: 国际会议

会议名称: 第二届功能原料国际研讨会(The 2rd International Symposium on Functional Materials)

会议地点: 杭州

会议语种:英文

页码: 149-152

在线出版日期: 2007-05-16（万方平台首次上网日期，不代表论文的发表时间）