FTIR analysis of PZT damage during wafer level transfer of thermo-piezoelectric SI3N4cantilevers on the CMOS-wafer for nano data storage applications
Degradation of lead zirconate titanate (PZT) during wafer level bonding of thermo-piezoelectric cantilevers with a CMOS-wafer was investigated. It was found that the polyimide film which serves as a height adjustment during wafer level bonding between cantilevers and the CMOS-wafer caused significant damage in the PZT sensor when polyimide was coated entirely on the PZT capacitor followed by heating to 300℃ for the bonding process. Fourier transform infrared spectroscopy (FTIR) was used to analyze the reaction product that caused PZT capacitor damage. Three different types of samples were analyzed using FTIR: a sample with coated polyimide only, a sample with a PZT capacitor with no polyimide exposed and a sample with a PZT capacitor where the polyimide has been coated, heated and then removed. NH2 or NH+3 peaks from the sample with the polyimide exposed PZT capacitor were found and these peaks were not detected on the sample with the PZT capacitor or on the polyimide coated sample only. These hydrogen ions contained in the NH2 or NH3 stretch during heating can lead to hydrogen atmosphere annealing which can attack PZT significantly. FTIR analysis therefore confirmed that polyimide reacted with the PZT capacitor to damage its piezoelectric properties.
Young-sik Kim WonHyeok Jin Sung Hoon Ahn Caroline Sunyong Lee
Devices and Materials Laboratory, LG Electronics Institute of Technology, 16 Woomyeon-dong, Seocho-g School of Mechanical and Aerospace Engineering and Institute of Advanced Machinery and Design, Seoul Division of Materials and Chemical Engineering, Hanyang University, Ansan, Kyunggi-do 426-791, Korea
国际会议
第二届功能原料国际研讨会(The 2rd International Symposium on Functional Materials)
杭州
英文
213-217
2007-05-16（万方平台首次上网日期，不代表论文的发表时间）