Characteristics of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT)

摘要：

The characteristics of an InP/InGaAs pnp heterostructure-emitter bipolar transistor is investigated using theoretical analysis and experimental methods. Although the valence band discontinuity at the InP/InGaAs heterojunction is relatively large, the addition of a heavily-doped, as well as thin p+-InGaAs emitter layer between p-InP confinement and n+-InGaAs base layers effectively eliminates the potential spike at the emitter-base junction, lowers the emitter-collector offset voltage, and increases the potential barrier for electrons simultaneously. Experimentally, a high current gain of 88 and a low offset voltage of 54mV could be achieved.

作者: Jung-Hui Tsai Der-Feng Guo Yu-Chi Kang Tzu-Yen Weng

作者单位: Department of Electronic Engineering, National Kaohsiung Normal University, 116, Ho-ping 1st Road, K Department of Electronic Engineering, Air Force Academy, PO Box 14-49 Kang-shan, Kaohsiung County 82 Department of Physics, National Kaohsiung Normal University, 116, Ho-ping 1st Road, Kaohsiung 802, T

会议类型: 国际会议

会议名称: 第二届功能原料国际研讨会(The 2rd International Symposium on Functional Materials)

会议地点: 杭州

会议语种:英文

页码: 293-296

在线出版日期: 2007-05-16（万方平台首次上网日期，不代表论文的发表时间）