FLOW FIELD AND TEMPERATURE FILED SIMULATION OF DIRECTIONAL SOLIDIFICATION OF POLYCRYSTALLINE SILICONINGOTS
A simplified model for directional solidification of polycrystalline silicon has been built in this study. On the base of setting thermophysical properties of polycrystalline silicon and boundary conditions of the model, the three-dimensional flow field and steady-state temperature field of directional solidification of polycrystalline silicon under different conditions was calculated by using a commercial software package, JSCAST. The influence of the ingot size, the heat transfer coefficient at the interface of ingot/mould wall and water on the directional solidification process have been analyzed.
polycrystalline silicon directional solidification simulation temperature field flow field
Shuyan SHI Hai HAO Xingguo ZHANG Shan YAO Yuanyuan LI Junze JIN
School of Materials Science and Engineering, Dalian University of Technology Linggong Road 2 Dalian, School of Materials Science and Engineering, Dalian University of Technology Linggong Road 2 Dalian,
国际会议
大连
英文
167-173
2007-08-19(万方平台首次上网日期,不代表论文的发表时间)