Experimental Investigation on the Temperature of Semiconductor Bridge (SCB) Plasma
Spectroscopic diagnostic technique is widely applied in the research and diagnosis of any kind of plasma, for its noninterference of measurement, high sensitivity and fast responsibility. In this paper, the temperature of the SCB plasma was estimated using the atomic Boltzmann plot method from the relative intensity ratio of two lines emitting Cu 510.5nm and Cu 521.8nm. The SCB with a heavily doped silicon film is typically in the size of 80um long, 350um wide and 2um thick. Under different discharge voltage of RCL, the ratio of emitting intensity of the two spectral lines was determined. The plasma temperature was calculated as a function of sustained time. The experiment results showed that the plasma temperature and the plasma light duration of the SCB device rose gradually with voltage increasing from 21V to 63V in a 22uF capacitor. The temperature of the plasma was in the range of 2000-6200K. The original time of the LTD (the late time discharge) came earlier with the increase of voltage. About 1.0mJ energy was dissipated before the onset of the LTD in the SCB.
semiconductor bridge plasma temperature double line of atomic emission spectroscopy
WU Rong ZHU Shunguan ZHANG Lin LI Yan FENG Hongyan
School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, China
国际会议
西安
英文
874-878
2007-10-23（万方平台首次上网日期，不代表论文的发表时间）