Nanoresistive switching device based on solid state electrolyte and alloy compound
With the further scaling down of semiconductor devices, conventional complementary metal-oxide semiconductor devices will approach their physical and technical limitations in the next decade. In order to solve this problem, new types of memory devices have been explored by using electrically switchable materials including amorphous chalcogenide semiconductors, oxides, organic materials and solid state electrolytes. Digital information can be stored in these devices by switching the device into the ON state or the OFF state corresponding to the algebraic state 0 and 1 states, respectively. These devices are nonvolatile and their states can be sustained with electric power off which is suitable for nonvolatile memory application. Here, we report the progress of the fabrication of the resistive switching devices with solid state electrolyte, such as Cu2S, AgI, RbAg4I5 etc. and alloy compound such as Ag33Se47Ge20 etc. in National Laboratory of Solid State Microstructures, Nanjing University. The size of the memory devices has been scaled down to 100 nm, the resistive ratio of the memory unit between the OFF state and the ON state is more than 106, some of them even more than 107. The read-write cycles could be repeated more than 105 times, the write and turn-off voltages are less than 2 V, and the read voltage is less than 0.5 V. Now the 16′16 arrays of the nano-memory devices based on the solid state electrolytes and the alloy compounds are just under process.
Jiang Yin Liang Chen Hongxuan Guo Bei Yang Zhiguo Liu
National Laboratory of Solid State Microstructures,Nanjing University,Nanjing 210093,China
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）