Novel Photomechanical Behaviors of ZnO Individual semiconducting Nanobelts
We report the observation of photoinduced elastic enhancement and anomalous elastic-plastic deformation transition in ZnO individual nanobelt. Under illumination alterations from darkness to ultraviolet and visible lights, the increase of Youngs modulus for ZnO nanobelts are exceeding 300％, and the elastic-plastic deformation transition threshold decrease abnormally within the range of 30-40％. For ZnO polar materials, the photoconductivity and photovoltaic effects of semiconductor, size effect of nanostructure, piezoelectricity of piezoelectric semiconductor, are successful to explain the mechanism of elastic enhancement of ZnO nanobelt. The major mechanism for contact-induced elastic-plastic transition is that high dislocation intensity inside crystalline and soft nature under illumination alterations result in the sudden and catastrophic nucleation and propagation of slip. We expect that the results will have implication in the development of semiconducting oxide nanobelts for forming the fabrication and application basis of ZnO nanobelt based surface acoustic wave and opto-electronic devices.
ZnO nanobelt illumination nanoindentation Youngs modulus semiconductor piezoelectricity slip
Y.Q.Chen J.S.Wang X.J.Zheng
Key Laboratory for Low dimensional materials & Application Technology,Xiangtan University,Ministry of Education,Xiangtan University,Xiangtan,411105,P.R. China
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）