The Fabrication and Characteristics of Nanocrystal Floating Gate Flash Memory
There have been concerns about how far the floating gate based non-volatile flash memory (NVM) can be extended and what will be the future directions of memory development. Several emerging new memories were studied as candidates for future memory which can solve the problem of conventional memories. Among them, the non-volatile memory (NVM) devices utilizing discrete nanocrystals (nc) as floating gate have received considerable research interests due to their excellent memory performance and high scalability. In this paper, we will present an overview of this type of memory devices investigated in our laboratory. Key issues involving nanocrystal selection, fabrication and tunnelling barrier engineering are discussed. It is found that non-volatile memory devices utilizing nanocrystals show promising characteristics as candidates for the next generation memories, especially when metal nanocrystals and high-κ tunnelling dielectrics are adopted.
nanocrystal non-volatile memory (NVM) high-κ dielectric
Ming Liu Shibing Long Weihua Guan Yuan Hu Liu Qi
Laboratory of Nanofabrication and Novel Device Integration,Institute of Microelectronics,Chinese Academy of Sciences
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）