The effect of Nitrogen partial pressure on microstructure and properties of nanocomposite Zr-Si-N films
Zr-Si-N films were sputtered by radio frequency powered reactive magnetron sputtering with different N2 partial pressure. The influence of N2 partial pressure on the microstructure and properties of Zr-Si-N films was studied. The results reveal that as the N2 partial pressure increases, the Zr/Si ratio decreases and the sheet resistance increases. The microstructure of Zr-Si-N film is composed of nano-crystallite ZrN embedded into amorphous matrix of SiNx phase and a small quantity of Zr2Si produced at low N2 partial pressure. The appearance of Zr2Si phase is related to the low nitride level. At the N2 partial pressure of 0.03Pa, the microhardness of Zr-Si-N films reaches the maximum value of about 22.5 GPa. The phenomenon that high N2 partial pressure results in low microhardness in Zr-Si-N films may be related to the lattice distortion induced by the addition of Si.
Zr-Si-N films magnetron sputtering microstructure properties
王剑峰 马大衍 宋忠孝 徐可为 唐武
西安交通大学金属强度国家重点实验室,710049,西安 电子科技大学电子薄膜与集成器件国家重点实验室,610054,成都
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）