A Nanoindentation Experiment on PECVD Silicon Oxide and Silicon Nitride Thin Films
A nanohardness tester was used to conduct nanomechanical characterization of silicon oxide (SiO2) and silicon nitride (Si3N4) thin films with varied thickness. Both SiO2 thin films and Si3N4 thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) on p-type silicon (111) substrate. The film thicknesses are 70, 150, 450nm for SiO2, and 100, 170, 220nm for Si3N4, respectively. Oliver and Pharr method is adopted in the calculation of hardness and elastic modulus of those thin films under varied loads. Hardness of SiO2 and Si3N4 films shows no indentation size effect. Elastic modulus of SiO2 films does not vary much with indentation depth, but shows dependence on film thickness. Elastic modulus of Si3N4 films depends less on film thickness but more on indentation depth.
Nanoindentation Plasma enhanced chemical vapor deposition (PECVD) Silicon oxide Silicon nitride Hardness Elastic modulus
吴子景 吴晓京 Wei-dian Shen 蒋宾
中国上海,200433,复旦大学材料科学系 中国上海,200433,复旦大学材料科学系;中国上海,200433,复旦大学微纳电子平台 Department of Physics and Astronomy,Eastern Michigan University,Ypsilanti,MI 48197,USA 中国上海,201203,上海集成电路研发中心
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）