Ferromagnetism and structure in Fe-doped GaN films
Fe-doped GaN films have been successfully fabricated on silicon (100) substrates through ammoniating Ga2O3:Fe films under flowing ammonia atmosphere at the temperature of 950 ℃. The structure of the samples was characterized by X-ray diffraction (XRD). No second phases were found with the increasing of Fe ion concentration from 0％ to 7％. Magnetic measurements indicated that all the films were ferromagnetic at room temperature, and the moment per Fe atom decreased with increasing Fe concentration. The largest magnetic moment observed was 1.92μB/Fe for Ga1-xFexN (x=0.01) film.
Ferromagnetism structure GaN rf alternate magnetron sputtering ammoniation
郭俊梅 侯登录 赵瑞斌 潘成福 甄聪棉 唐贵德
河北师范大学物理科学与信息工程学院 石家庄050016
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）