Raman and Fluorescence Spectra of GaP/SiO2 Nanocrystals Embedded Films
GaP/SiO2 nanocrystals embedded films were prepared by radio frequency magnetron co-sputtering and subsequent annealing technology. The structure, constituent and optical properties of the films were analyzed by X-ray diffraction (XRD), Energy dispersive spectrometer (EDS), Raman spectra and Fluorescence spectra technology. Raman results showed that both transverse optics phonon model (TO) and longitudinal optics phonon model (LO) of GaP nanocrystals were discovered to be red shift, broadening and asymmetry. The red shift degree of the TO model was about 8.8 cm-1. They were connected with the combined action of finite size effect and stress. The Si-O stretching mode of SiO2 with amorphous state feature revealed that GaP nanocrystals were embedded in amorphous medium. The compositive vibration mode of GaPO― cluster suggested the existence of gallium vacancy and gallium oxides defects. Fluorescence spectra of GaP/SiO2 films consisted of several emission peaks. 2.84 eV ～ 2.54 eV blue light emission was explained by quantum confinement-luminescence centers model (QC-LCs). The origins of 3.1 eV violet light, 3.49 eV ultraviolet light (UV) and 2.34 eV green light emission were attributed to Ga-O related defects and gallium oxide particles.
GaP/SiO2 nanocrystals embedded film Raman scattering photoluminescence quantum confinement effect
柴跃生 杨梅慧 张敏刚 孙钢
太原科技大学材料科学与工程学院,太原030024
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）