Change of the Sputtering Voltage during the Preparation of Vanadium Oxide Thin Films

摘要：

Vanadium oxide thin films were deposited on P(100) silicon substrates with silicon nitride thin film layer by DC reactive magnetron sputtering method. Changes of the sputtering voltage in a certain flux of Ar gas and different flux ratio of Ar/O2 mixed conditions were studied. X-ray Photoelectron Spectroscopy (XPS) was performed to analyze the V/O ratio of the vanadium oxide thin films deposited. Square resistance (R□) and temperature coefficient of square resistance (TCR) of the thin films were examined. Surface morphology was visualized by atomic force microscope (AFM). Experiments demonstrate that the sputtering voltage has different change tendency in different gas conditions and the results revealed that V/O ratios of vanadium oxide thin films can be controlled by precisely control the sputtering voltage.

关键词： Vanadium oxide thin films magnetron sputtering sputtering voltage

作者: Xiong-bang Wei WU Zhi-ming WANG Tao JIANG Ya-dong

作者单位: School of Optoelectronic Information,State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China(UESTC),Chengdu 610054,P. R. China

会议类型: 国际会议

会议名称: 第六届中国国际纳米科技研讨会

会议地点: 成都

会议语种:英文

在线出版日期: 2007-11-19（万方平台首次上网日期，不代表论文的发表时间）