Ferroelectric and pyroelectric properties of highly (111)-oriented nanocrystalline Pb(Zr0.95Ti0.05)O3 thin films
Lead zirconate titanate Pb(Zr0.95Ti0.05)O3 (PZT95/5) antiferroelectric thin films with 300 nm thickness were grown on Pt/Ti/SiO2/Si substrates by using a sol-gel method with rapid thermal annealing processing. The X-ray diffraction results show that the highly (111)-oriented pervoskite PZT95/5 thin films were grown on Pt/Ti/SiO2/Si substrates when annealed at 600-700 ℃. The electrical measurements were conducted on PZT95/5 films in metal-ferroelectric-metal (MFM) capacitor configuration. The PZT95/5 thin films annealed at 600-700℃ showed a well-saturated hysteresis loops at an applied voltage of 20 V. At 1 kHz, the dielectric constant and dielectric loss of the films are 519 and 0.028, 677 and 0.029, 987 and 0.025, respectively for the thin films annealed at 600 ℃, 650 ℃, and 700 ℃. The average remanent polarization (Pr) and the coercive electric field (Ec) obtained from the P-E hysteresis loops, are 19.1 mC/cm2 and 135.6 kV/cm, 29.3 mC/cm2 and 88.57 kV/cm, 45.3 mC/cm2 and 102.1 kV/cm, respectively for PZT95/5 thin films annealed at 600, 650 and 700 ℃ for 10 min in the oxygen atmosphere. It shows a good ferroelectricity of the prepared PZT95/5 films on Pt/Ti/SiO2/Si substrates by the simple sol-gel processing. The pyroelectric coefficient (p) of antiferroelectric PZT95/5 films was measured by a dynamic technique. At room temperature, the p value of the antiferroelectric PZT95/5 films is 274, 238 and 212 mC/m2K, respectively at 1 kHz.
PZT95/5 films Antiferroelectric Ferroelectric properties Pyroelectric coefficient Sol-gel
刘秋香 唐新桂 蒋艳平 陈王丽华
广东工业大学物理与光电工程学院,广州市大学城,广州510006;低维材料及其应用技术教育部重点实验室(湘潭大学),湖南湘潭,湘潭411105 香港理工大学应用物理系与材料研究中心,香港红堪,九龙
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）