Polycrystalline TiO2 Thin Films Deposited by a Modified Oxygen Pulse Magnetron Sputtering
In this paper, polycrystalline TiO2 thin films were deposited on slide glass by a modified sputtering, which called oxygen pulse DC magnetron reactive sputtering as oxygen was systematically controlled like pulse. This technology can effectively abate target poisoning and increase the deposition rate by about 7 times compared with conventional reactive sputtering. The effects of deposition time, oxygen partial pressure and time of oxygen on-off on deposition rate, crystal structure and surface topography were investigated by elliptical polarization measurement, X-ray diffraction (XRD), and field emission scanning electron microscopy (FE-SEM), respectively. The results indicated that samples deposited at oxygen partial pressure of 30％, Toff = 30s and 20s have the best crystalline structure with unique phase of rutile or anatase and at Toff = 30s TiO2 film has the best surface topography. Besides, the sample tends to form rutile under higher deposition rate and lower oxygen concentration. Electrical resistivity was studied by Van der Pauw method and samples with which around 10 Ω·cm deposited at oxygen partial pressure of 30％, Toff = 30s and 50％, Toff = 40s, respectively, are suit for our further study.
TiO2 thin films Reactive sputtering Oxygen control Deposition rate
王秩伟 龚恒翔 李雪
西华师范大学物理与电子信息学院 四川 南充 637002;绍兴文理学院材料物理与设备研究所 浙江 绍兴 312000 绍兴文理学院材料物理与设备研究所 浙江 绍兴 312000
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）