Piezoelectricity of ZnO films prepared by sol-gel method

摘要：

The ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, which were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and atomic force microscope (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grains size of ZnO film investigated by AFM show that roughness and grains size of ZnO piezoelectric films are decreasing with the increase of the film thickness. The roughness dimension is 2.188～0.914 nm. The piezoelectric coefficient d33 is investigated with piezo-response force microscope (PFM). The results show that d33 is increasing with the increase of thickness and (002) orientation. As the Force Reference (Force Ref.) is close to surface roughness of the films, the piezoelectric coefficient d33 measured is inaccurate and fluctuates in a large range, while the Force Ref. is big, the piezoelectric coefficient d33 changes little and keeps constant ultimately at a low frequency.

关键词： ZnO thin films piezoelectric coefficient piezo-response force microscope sol-gel surface roughness

作者: 张克明 赵亚溥 何发泉 刘冬青

作者单位: 中国科学院力学研究所非线性国家重点实验室,北京100080,中国;北京科技大学应用科学学院固体力学,北京100083,中国 中国科学院力学研究所非线性国家重点实验室,北京100080,中国 京科技大学应用科学学院固体力学,北京100083,中国

会议类型: 国际会议

会议名称: 第六届中国国际纳米科技研讨会

会议地点: 成都

会议语种:英文

在线出版日期: 2007-11-19（万方平台首次上网日期，不代表论文的发表时间）