Phase transformation behavior in PZT films studied by scanning probe microscopy
PZT thin films on Pt/SiO2/Si substrate were prepared by RF magnetron sputtering. Atomic force microscopy (AFM) and piezoresponse force microscopy (PFM) were employed to investigate some behavior of the phase transformation process from non-perovskite to perovskite. It was found that the ferroelectric domains in PZT film during a rapid thermal annealing grew in rosette mode, the correlation between topography and perovskite phase area was formed in early thermal annealing process, and then was broken as further annealed time increased. With the annealed time increased, some phase transformation area changed from no ferroelectric domain to mono ferroelectric domain and to multi ferroelectric domain finally.
Leadsironate titanate Phase transformation Scanning probe microscopy
王志红 黄惠东 沈健 曾慧中
电子科技大学电子薄膜与集成器件国家重点实验室 成都 610054
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）