The Controllable LPE Growth of the PZNT91/1 Film
A improved vertically dipping LPE technique was developed to produce the film of (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 on the substrates of SrTiO3 (001). The improved technique can offer a controllable time-lag before the melt adhered on the bottom of the substrate is crystallized. During the moment, the rolling force of the substrate can level the surface and reduce the quantity of the melt adhered on the bottom of the substrate. Comparing to the film produced by using normal LPE method, the thickness of the PZNT film produced by improved LPE method was up to nanometer grade, had a uniform appearance, and had a column-shaped morphology for its grains while that of the former was a square-shaped morphology. The film produced by using both normal LPE method and improved method had good alignment on the SrTiO3 (001) substrate.
Liquid phase epitaxy Ferroelectric materials substrate perovskite
万尤宝 吴宇容 袁国祥 杨辉
浙江大学材料与化工学院无机材料研究所 300200;嘉兴学院先进材料研究所 314001 嘉兴学院先进材料研究所 314001 浙江大学材料与化工学院无机材料研究所 300200
国际会议
成都
英文
2007-11-19(万方平台首次上网日期,不代表论文的发表时间)