Nanocrystal Non-Volatile Memories: Simulation, Fabrication and Characteristics

摘要：

Recently, non-volatile memory (NVM) devices utilizing discrete nanocrystals (nc) as floating gate have received considerable research interests due to their excellent memory performance and high scalability. In this paper, we will present an overview of this type of memory devices investigated in our laboratory. Key issues involving nanocrystal selection, fabrication and tunnelling barrier engineering are discussed. It is found that non-volatile memory devices utilizing nanocrystals show promising characteristics as candidates for the next generation memories, especially when metal nanocrystals and high-κ tunnelling dielectrics are adopted.

关键词： nanocrystal non-volatile memory (NVM) high-κ dielectric

作者: Ming Liu Weihua Guan Zhigang Li Yuan Hu Shibing Long Rui Jia Qin Wang

作者单位: Laboratory of Nanofabrication and Novel Device Integration,Institute of Microelectronics,Chinese Academy of Sciences

会议类型: 国际会议

会议名称: 第六届中国国际纳米科技研讨会

会议地点: 成都

会议语种:英文

在线出版日期: 2007-11-19（万方平台首次上网日期，不代表论文的发表时间）