Affect of annealing temperature on capacitive humidity sensing properties of silicon nanoporous pillar array

摘要：

Capacitive humidity devices based on silicon nanoporous pillar array (Si-NPA) were fabricated and annealed at 250℃, 450℃ and 550℃, respectively. The experimental data show that the sensitivity for the devices annealed both at 250℃ and 450℃ was greatly enhanced and the higher the annealing temperature, the higher the sensitivity obtained, accompanied with the corresponding response times being slightly prolonged. But the sensitivity for the devices annealed at 550℃ decreased drastically. The evolution of the surface morphology with annealing temperature was observed through filed-emission scanning electron microscope, and it was found that the porous structure for the device annealed at 550 ℃ seemed become much densified. Our results indicated that the sensitivity of Si-NPA-based sensors could be improved significantly through suitable annealing process, with its merit of fast response being well kept.

关键词： silicon nanoporous pillar array (Si-NPA) capacitive humidity sensing property annealing treatment

作者: 吉慧芳 董永芬 李隆玉 姜卫粉 吕运朋 李新建

作者单位: 郑州大学材料物理教育部重点实验室,450052,郑州;郑州大学测控技术系,450003,郑州 郑州大学材料物理教育部重点实验室,450052,郑州 郑州大学测控技术系,450003,郑州

会议类型: 国际会议

会议名称: 第六届中国国际纳米科技研讨会

会议地点: 成都

会议语种:英文

在线出版日期: 2007-11-19（万方平台首次上网日期，不代表论文的发表时间）