Pillar density modulation of silicon nanoporous pillar array by hydrothermal etching conditions
Silicon nanoporous pillar array (Si-NPA) is a silicon micron/nanometer structural composite system prepared by hydrothermal etching method, which is characterized by its regular hierarchical structure and excellent properties of broad-band light absorption and photoluminescence (PL). The modulation effect of the solution concentrations and etching temperature on the surface density of silicon pillars and PL properties of Si-NPA was studied for the hydrothermal etching solution system based on the aqueous solution of HF and Fe(NO3)3. It was found that when the etching temperature, HF (Fe3+) concentration were fixed, the planar densities of silicon pillars for Si-NPA samples would decreased exponentially with the concentration of Fe3+ (HF), but their PL peak positions remain unchanged. On the other hand, when the solution concentrations of Fe3+ and HF were fixed, the planar densities of silicon pillars for Si-NPA samples would decrease monotonously with the increment of etching temperature, with an obvious blue-shift of the PL peak positions and an increment of the PL peak intensity.
silicon nanoporous pillar array (Si-NPA) planar density of silicon pillars photoluminescence (PL)
李亚勤 孙新瑞 许海军 姜卫粉 李新建
郑州大学物理系,材料物理教育部重点实验室,郑州 450052
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）