The Study of High-brightness and High-power InGaAlP Double -sides Red LED
In this paper, it is reported that the material structure design and device fabrication of high-brightness and high-power InGaAlP double-sides red LED with electrodes of finger structure. The I-V characteristics, light emission spectrum, luminous flux and luminous intensity of this LED have been measured. A good characteristic is obtained with turn-on voltage of 1.5V and forward current of 350mA at its forward voltage of 3.8V. The peak wavelength is 635nm, which corresponds to red light, and the Full Width of Half Maximum is 16.4nm at injection current of 350mA. The luminous intensity is 830 mcd.
LED InGaAlP wet etching
王小丽 牛萍娟 郭维廉 罗慧英 李晓云 刘宏伟 杨广华 高铁成 于欣
天津工业大学信息与通信工程学院,天津 300160
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）