Investigation on Memory effects of MOS capacitors with Ru nanocrystals embedded into Al2O3 dielectric
The Al2O3/Ru-nanocrystals/Al2O3 stack structure has been constructed using atomic-layer-deposition technique, and the memory effects of the MOS capacitor with the aforementioned structure have been investigated accordingly. The experimental results indicate that high density Ru nanocrystals as great as 9′1010 cm-2 can be achieved on the Al2O3 film at the low temperature of 330℃. X-ray photoelectron spectroscopy analyses reveal that the Ru nanocrystal is composed of pure metallic Ru core and surrounding RuO2 layer. The memory capacitor demonstrates a CV hysteresis window of 3.4V in a low voltage sweep range of -2.5 ～ +8V and a large flat-band voltage shift of 3.2V for 10 V/1 ms programming, i.e., a fast programming speed. The resulting electrical properties should be attributed to a large potential well depth and direct tunneling mechanism across the tunnel layer of Al2O3.
Atomic layer deposition ruthenium nanocrystals memory effect
张敏 廖仲伟 黄玥 陈伟 丁士进 张卫
复旦大学微电子研究院,上海 200433
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）