Nano-Structure Character and Performance of PZT thin film
The modified So1-Gel methods are utilized to prepare nanosized PZT thin films on Pt／Ti／SiO2／Si substrate. The microstructure, surface morphology, and electrical properties of PZT thin film with thickness of 520nm and 670nm are studied. The results indicate that (110) preferred orientation is more evident for the PZT thin film with thickness of 670nm, and the surface quality of the PZT thin film with thickness of 520nm is better, whose crystal grain sizes and arrangements are uniform and ordered, respectively. The tests of electrical property show that for the PZT thin film with thickness of 520nm the leakage current is 0.64nA, which is 1/1000 of the PZT thin film with thickness of 670nm, and the ferroelectric property is fine.
PZT thin film XRD AFM leakage current ferroelectric property sol-gel
倪鹤南 惠春 徐爱兰 李敏
上海交通大学微纳科学技术研究院、微米／纳米加工技术国家重点实验室 薄膜与微细技术教育部重点实验室,上海 200030
国际会议
成都
英文
2007-11-19（万方平台首次上网日期，不代表论文的发表时间）