ZnO nanopipes grown on InAs substrate by PLD

摘要：

In-doped ZnO nanopipes were grown on the InAs(100) substrate by pulsed laser deposition at relatively high temperature. Through FESEM, XRD analysis and photoluminescence study, the morphology of the ZnO nanopipes was shown, the material and crystalline quality were confirmed and the PL spectrum was given. The test results showed that the ZnO nanopipes array whose average diameter was about 400nm was fine and close and had a preferred grown orientation perpendicular to the substrate. The results of XRD revealed that the nanostructure grown had perfect crystalline quality and the Indium element of substrate diffused forming IZO compound.

关键词： Zinc oxide nanopipe InAs XRD FESEM

作者: 李娇 胡礼中 于东麒 张贺秋 胡昊 赵子文 付强 杜国同

作者单位: 大连理工大学三束材料改性国家重点实验室,辽宁 大连 116024;大连理工大学物理与光电工程学院,辽宁 大连 116024

会议类型: 国际会议

会议名称: 第六届中国国际纳米科技研讨会

会议地点: 成都

会议语种:英文

在线出版日期: 2007-11-19（万方平台首次上网日期，不代表论文的发表时间）