Study on nano-mechanical properties of passivation thin films in IC

摘要：

Silicon oxide and silicon nitride, frequently used as passivation layers in IC processes, exert more direct and more apparent effects to the electrical properties of devices, even to the whole circuit, as the critical dimension of IC devices continues to decrease. In the experiment herein, both SiO2 thin films and Si3N4 thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) on p-type silicon (111) substrate. The film thicknesses are 70, 150, 450nm for SiO2, and 100, 170, 220nm for Si3N4, respectively. A nanohardness tester was then used to conduct nanomechanical characterization on those SiO2 and Si3N4 thin films. Oliver and Pharr method is adopted in the calculation of hardness and elastic modulus of those thin films under varied loads. Hardness of SiO2 and Si3N4 films shows no indentation size effect. Elastic modulus of SiO2 films does not vary much with indentation depth, but shows film thickness dependence. Elastic modulus of Si3N4 films depends less on film thickness, but more on indentation depth.

关键词： Nanoindentation Plasma enhanced chemical vapor deposition (PECVD) Silicon oxide Silicon nitride Hardness Elastic modulus

作者: 吴子景 吴晓京 Weidian Shen 蒋宾

作者单位: 复旦大学材料科学系,200433,上海 复旦大学材料科学系,200433,上海;复旦大学微纳电子平台,200433,上海 Department of Physics and Astronomy,Eastern Michigan University,Ypsilanti,MI 48197,USA 上海集成电路研发中心,201203,上海

会议类型: 国际会议

会议名称: 第六届中国国际纳米科技研讨会

会议地点: 成都

会议语种:英文

在线出版日期: 2007-11-19（万方平台首次上网日期，不代表论文的发表时间）