Design and Simulation of a DC-Contact Series RF MEMS Switch
The design and simulation of a DC-contact series RF MEMS switch with slanting beams is reported. By introducing of slanting beams, the warping problem of cantilever beam under residue stress is solved. The layout and process is designed. HFSS and Intellisuite is used to simulate the RF performance and the mechanical characteristic respectively. The insertion loss is <0.1dB@DC~10GHz; the isolation is <0.1dB@DC~10GHz and the pull-down voltage is about 35V. The novel DC-contact RF MEMS switch is suit for the application of frequency range from DC to 6GHz.
Radio Frequency MEMS DC-Contact Series RF MEMS Switch Residue Stress
侯智昊 刘泽文 胡光伟 刘理天 李志坚
清华大学微电子学研究所,北京,100084
国际会议
成都
英文
2007-11-19(万方平台首次上网日期,不代表论文的发表时间)