High Power 850nm Superluminescent Diodes Design and Fabrication

摘要：

High power, wide spectrum 850nm superluminescent diodes (SLD) structure is grown by Molecular Beam Epitaxy (MBE). By systematically comparing the various methods of suppression of lasing, we have obtained the optimal SLD structures. A maximum light power output of 1 mW was obtained at 120 mA current from a single mode polarization pertaining fibers (fiber core diameter 5.7μm, NA 0.22).

关键词： High Power 850nm Superluminescent diodes

作者: LI Hui LI Mei WANG Yuxia GAO Xin QU Yi BO Baoxue LIU Guojun

作者单位: State Key Lab. on High Power Semiconductor Lasers Changchun University of Science and Technology, Changchun, P. R. China 130022

会议类型: 国际会议

会议名称: 第七届国际测试技术研讨会

会议地点: 北京

会议语种:英文

在线出版日期: 2007-08-05（万方平台首次上网日期，不代表论文的发表时间）