会议专题

High Power 850nm Superluminescent Diodes Design and Fabrication

High power, wide spectrum 850nm superluminescent diodes (SLD) structure is grown by Molecular Beam Epitaxy (MBE). By systematically comparing the various methods of suppression of lasing, we have obtained the optimal SLD structures. A maximum light power output of 1 mW was obtained at 120 mA current from a single mode polarization pertaining fibers (fiber core diameter 5.7μm, NA 0.22).

High Power 850nm Superluminescent diodes

LI Hui LI Mei WANG Yuxia GAO Xin QU Yi BO Baoxue LIU Guojun

State Key Lab. on High Power Semiconductor Lasers Changchun University of Science and Technology, Changchun, P. R. China 130022

国际会议

第七届国际测试技术研讨会

北京

英文

2007-08-05(万方平台首次上网日期,不代表论文的发表时间)