High Power 850nm Superluminescent Diodes Design and Fabrication
High power, wide spectrum 850nm superluminescent diodes (SLD) structure is grown by Molecular Beam Epitaxy (MBE). By systematically comparing the various methods of suppression of lasing, we have obtained the optimal SLD structures. A maximum light power output of 1 mW was obtained at 120 mA current from a single mode polarization pertaining fibers (fiber core diameter 5.7μm, NA 0.22).
High Power 850nm Superluminescent diodes
LI Hui LI Mei WANG Yuxia GAO Xin QU Yi BO Baoxue LIU Guojun
State Key Lab. on High Power Semiconductor Lasers Changchun University of Science and Technology, Changchun, P. R. China 130022
国际会议
北京
英文
2007-08-05(万方平台首次上网日期,不代表论文的发表时间)