Research on Noise Model of Avalanche Photodiode
Aim at the feature of Separate absorption and multiplication avalanche photodiode (SAMAPD), under reverse bias voltage, the electric fields distributing of APD had been approximated. Considering carriers diffusion and drift in different regions, adopting an normalization manner from mathematics, the circuit model of noise for APD had been found by rate equation of carriers and continuity of carriers at the layer, And obtain the relation curve between noise current and bias voltage. The result of simulate indicate that the output characteristic of noise model is almost consistent with the experiment data get from the real part. According to the parameter setting based on the wide of multiplication region in the model, avalanche breakdown voltage of APD could be ascertained. This model can be simulated directly by existing emulator, and has established a foundation for computer assisted design of APD.
Wan Junli Jiang Binghua Luo Haiyue Tang Liangshu
College of Electrical Engineering & Information Technology, China Three Gorges University.Yichang City, 443002 P.R. China
国际会议
北京
英文
2007-08-05（万方平台首次上网日期，不代表论文的发表时间）