Ti and Cu/Ti Thin Films Grown on Si (111) by Sputtering
The Ti/Si (111) and Cu/Ti/Si(111) thin films were grown by sputtering. The thickness, resistivity , structure, components, uniformity and the surface morphology of the thin films were tested by the兛-step device, the Four points resistance, Scan electrical microscope (SEM), X-ray diffraction (XRD) and the Infrared spectrum respectively. The results show that Cu and TiSi2 were grown on the substrate Si at 150~200 亷 by Sputtering, the Cu film component include Cu(111) , Cu(200) and Cu(220), the main components Cu(111) of that the crystal size is 17nm. The average thickness of the Cu/Ti/Si films is 460nm, the ratio between the roughness and the average thickness is 3％; the resistivity of Ti/Si is 22.2866兪丒cm and Cu/Ti/Si is 3.445兪丒cm. So the Cu film grown on the TiSi2/Si(111) which use the TiSi2 as buffer had the preferably anti-oxidation, uniformity and compact.
Sputtering1 Nanometer Cu TiSi2 Film
MAO Xu DING Mingqing
Department of Materials of Yunnan University, Kunming, 650091, China;Institute of Microelectronics, Beijing Vacuum Electronics Research Institute, Beijing ,100016, China
国际会议
北京
英文
2007-08-05（万方平台首次上网日期，不代表论文的发表时间）