X-ray Double Crystal Diffractian Study of InGaAs
Two compound semiconductor (III-V) film structures are studied by high resolution X-ray double crystal diffraction. InGaAs/GaAs quantum wells grown on GaAs substrate is analyzed. X-ray double crystal diffraction has a particular advantage of studying material crystal important information such as integrality, equality, deep of layer, composition, stress change, disfigurement and interface. Using it is not only providing exact parameters for growing material technics and directing growing technics, but also providing reliable basic for studying apparatus. This paper introduces a studying way for the optics character and structure of a model sample by the X-ray double crystal diffraction.
Hou Zhuo Xiong Ji Jun
Kay Lab of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of Education Taiyuan, Shanxi, 030051, P.R.China
国际会议
北京
英文
2007-08-05（万方平台首次上网日期，不代表论文的发表时间）