Fabrication and Characterization of Si Nanowire Scaling to 20 nm by Spacer Technology

摘要：

Suspended silicon nanowires with line widths of 20~30 nm have been fabricated successfully by spacer technology. Both wet-etching and hydrofluoric vapor-phase-etching release methods are developed to realize the suspended structures. Current-voltage characteristics of the silicon nanowires with different kinds of doping are investigated, and mechanical vibration of nano-cantilevers is also observed. The silicon nanowires can be used as a nano-template for different applications.

关键词： Si nanowire spacer technology HF vapor phase etching nano-template

作者: XIANG Han WENGANG Wu LING Xia JUN Xu GUIZHEN Yan

作者单位: National Key Laboratory of Micro/Nano Fabrication Technology, Institute of Microelectronics, Peking Electron Microscopy Laboratory, Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: 第七届国际测试技术研讨会

会议地点: 北京

会议语种:英文

在线出版日期: 2007-08-05（万方平台首次上网日期，不代表论文的发表时间）