Investigation of Nano SiC Resonator

摘要：

In this paper, a nano SiC resonator with high frequency and high Q factor was developed. This resonator utilized as-deposited PECVD SiC thin film as its resonance diaphragm, a thin layer of tungsten as its upper electrode, the thickness of this combined thin film is about 680 nm. The fabrication process is simple and under low temperature (<300 ℃), which make it could be integrated with CMOS process. Tested by a nano-based method, this SiC nano Resonator shows good resonance performance at 1.98MHz and has high Q factor about 440. Due to its material merits, this high quality nano SiC resonator could be applied in harsh environment, such as, high temperature, high pressure and erosion conditions.

关键词： nano resonator Silicon Carbide high frequency high Q

作者: Zhe Chen Dayu Tian Guobing Zhang Haixia(Alice) Zhang

作者单位: National Key Laboratory of Nano-Micro Fabrication Technology, Institute of Microelectronics, Peking University, Beijing, China, 100871

会议类型: 国际会议

会议名称: 第七届国际测试技术研讨会

会议地点: 北京

会议语种:英文

在线出版日期: 2007-08-05（万方平台首次上网日期，不代表论文的发表时间）