Meso- piezoresistance in Si1-xGex/Si

摘要：

In this paper we will define the meso- piezo-resistance after studying theoretically how the resonant tunneling current density will depend on the bias voltage and strain. As a result the expression of the meso- piezo- resistance coefficient will be given, and the dependence of the resonant tunneling current density on the bias voltage and strain in Si1-xGex/Si based on computer simulations will be displayed graphically. The dependence of the equivalent resistance coefficient on the bias voltage and strain will also be shown. With increasing bias voltage the resonant tunneling current density has a maximum at 0.45 V, which will shift to a higher bias voltage with increasing strain along the x-direction. Contrary to the resonant tunneling current density, the equivalent resistance coefficient decreases with increasing strain in the x direction. It is shown that the equivalent resistance coefficient can be tuned in the range of 0.22 to 6.85 V cm2/A and that the meso- piezo- resistance coefficient displays a better linear dependence on the strain in the bias voltage range of 0.7 V to 1.4 V. This result should be helpful for engineers in designing devices based on meso- effects, which convert mechanical signals into electrical signals and have to meet different requirements.

关键词： meso- piezo- resistance coefficient strain resonant tunneling current bias voltage

作者: L.P. Xu T.D. Wen X.F. Yang H.D. Hochheimer

作者单位: Department of Physics, North University of China, Taiyuan, Shanxi 030051, China;Department of Physic Department of Physics, North University of China, Taiyuan, Shanxi 030051, China Department of Physics, Colorado State University, Fort Collins, CO 80523, USA

会议类型: 国际会议

会议名称: 第七届国际测试技术研讨会

会议地点: 北京

会议语种:英文

在线出版日期: 2007-08-05（万方平台首次上网日期，不代表论文的发表时间）