An Acoustic Sensor Based on the Piezoresistive Effect of RTS
Pressure applied to the resonant tunnelling diode (RTD) changes its current-voltage characteristics, which can be used on sensor design. This paper reports an acoustic sensor based on AlAs/InGaAs/GaAs resonant tunnelling structures (RTS), which is using air-bridge technology. The RTD is incorporated in a 10 m μ thick cantilever diaphragm using inductivity coupled plasma (ICP) technology and the fabrication of the cantilever diaphragm is based upon the micromachined control holes technology by ICP too. After the fabrication of sensor, elementary measurements have been carried on, which show the sensor has a good frequency response.
Acoustic sensor RTD Air-bridge ICP.Control holes.
TONG Zhaomin XUE Cheyang ZHANG Binzhen WANG Jian ZHANG Wendong
National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science&Dynamic Measurement (North University of China), Ministry of Education Department of Electronic Science and technology, North university of China, Tai
国际会议
北京
英文
2007-08-05(万方平台首次上网日期,不代表论文的发表时间)