Effect of Stress on I-V Curves of Resonant Tunneling Structuers

摘要：

Effect of stress on I-V curves is an important character of resonant tunneling structures.The shift of I-V curves can be used to simulated as a piezo-resistant effect of a material.Theoretical analyse shows the reason of this shift might be the change of effective mass of carriers and piezo-electric field caused by the polarization of the material,and so on,but the latter one is most importan and significant.In order to make use of this effect to manufacture sensors, the shift of the I-V curves must be studied carefully,and the linearity and stabilty connected with the shift of the curves has to be studied,and the rangement of stress can be applied to the device must be clear.

关键词： I-V curve resonant tunneling structure stress effective mass piezoelectric effect

作者: WEI Tianjie XUE Chenyang ZHANG Wendong

作者单位: Key Laboratory of Instrumentation Science & Dynamic Measurement North University of China,Ministry o Key Laboratory of Instrumentation Science & Dynamic Measurement North University of China,Ministry o

会议类型: 国际会议

会议名称: 第七届国际测试技术研讨会

会议地点: 北京

会议语种:英文

在线出版日期: 2007-08-05（万方平台首次上网日期，不代表论文的发表时间）