Pull-in Effect of RF MEMS Shunt Switches

摘要：

Pull-in instability of a RF MEMS shunt switch is presented in this paper A static mechanical model considering the residual stress effects established to demonstrate the pull-in instability phenomenon of the RF MEMS shunt switch and predict the effective stiffness constant and the pull- voltage of the switch. An optoelectronic laser interferometric system, based on a modified Michelson interferometer incorporated with optoelectronic devices including a He-Ne Laser, conventional optics, CCD sensor and a photodiode, is developed to evaluate the bridge deformation characteristics of the RF MEMS shunt switch with different applied DC bias voltages. It is illustrated that the results of the analytical solution are well agreed with that of numerical simulation and experiment.

关键词： RF-MEMS RF MEMS shunt switch Pullinvoltage Optoclectronic laser interferometric system

作者: H. Guo J. -M. Huang Z. L. Deng

作者单位: School of Electronic Engineering Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China

会议类型: 国际会议

会议名称: 第七届国际测试技术研讨会

会议地点: 北京

会议语种:英文

在线出版日期: 2007-08-05（万方平台首次上网日期，不代表论文的发表时间）