Research on Event-Dependent Latent Damage in ESD-Injected High-Frequency Low-Noise Silicon Transistors

摘要：

Presently little research had been done on latent damage in silicon bipolar transistors. In order to know whether the event-dependent latency existed inside Si dipolar transistors or not, particular examination was made in high-frequency low-noise silicon dynatrons. HBM ESD pulses were constantly injected into CB knot (C was positive, B was negative), the most sensitive pins to ESD of this kind of transistors, until transistors had been damaged. The relationship between ESD-injected voltage and interval time had been found. Same voltage and stepped voltage ESD were injected separately. The relationship between injected voltage and injected times was tested. The phenomena of same-voltage ESD injected test were more different than the stepped voltage injection. It could be conformed that nearly 50％ threshold voltage ESD injection would make the existence of latency finally inside Si high-frequency dynatrons. Nevertheless, the antistatic capacity was improved because of some certain voltage ESD injections.

关键词： ESD high-frequency low-noise silicon dynatron transistor event-dependent latent damage

作者: YANG Jie LIU Shanghe QI Shufeng JU Kairu

作者单位: Electrostatic and Electromagnetic Protection Institute, Shijiazhuang Mechanical Engineering College, Shijiazhuang 050003, China

会议类型: 国际会议

会议名称: 第七届国际测试技术研讨会

会议地点: 北京

会议语种:英文

在线出版日期: 2007-08-05（万方平台首次上网日期，不代表论文的发表时间）