Research on Photoluminescence of GaSb Film with LT GaSb Buffer Layer

摘要：

Epitaxial GaSb thin films were respectively grown with low temperature (LT) GaSb buffer layers having different thicknesses, growth rates and flux ratios. Properties of the GaSb thin films were studied in facilitation of photoluminescence spectrums. The LT GaSb buffer layers are critical to improve the quality of the GaSb epitaxial films, and reduce the threading dislocation density therein. The LT GaSb buffer layers are adapted to improve the quality of GaSb thin films under appropriate growth conditions. Thickness of LT GaSb buffer was optimized to be 20nm under the lowest antimony overpressure.

关键词： GaSb film Photoluminescence LT GaSb buffer layer molecular beam epitaxy

作者: LI Lin LIU Guo-jun WANG Yong LI Mei WANG Xiao-hua

作者单位: National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, China

会议类型: 国际会议

会议名称: 第七届国际测试技术研讨会

会议地点: 北京

会议语种:英文

在线出版日期: 2007-08-05（万方平台首次上网日期，不代表论文的发表时间）