OPTICAL PROPERTY ANALYSIS OF MICROBOLOMETER BASED ON MEMS
The optical constant of TiN and amorphous silicon thin film as well as film thickness of thermal resistive amorphous silicon were measuredby ellipsometry apparatus, which were in agreement with the result from SEM section analysis. According to optical admittance matrixtheory, relation between sensing film thickness, resonant cavity height of microbolometer and infrared absorptivity was simulated using FEA(Finite Element Analysis) MatLab software. Optimal film thickness and resonant cavity height for high infrared absorptivity ranging from 3~5 to 8~14 μm atmosphere window infrared bands were achieved, which provides reliable evidence to improve the sensitivity of microbolometer.
MEMS optical admittance matrix resonant cavity FEA
Shibin Li Zhiming Wu Naiman Liao Yadong Jiang Wei Li Junsheng Yu
School of Optoelectronic Information, University of Electronic Science and Technology of China (UEST State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien
国际会议
海南三亚
英文
2007-01-10(万方平台首次上网日期,不代表论文的发表时间)