A 2.4-GHz 0.18 μm Full-CMOS Single-Stage Class-E Power Amplifier with Temperature Effect for ISM Band Wireless Communication
In this paper, we present a single-stage class-E power amplifier with multiple-gated shape as well as 0.18 μm complementary metal-oxide-semiconductor (CMOS) process for 2.4GHz Industry-Science-Medicine (ISM) band. This power amplifier is able to be easily integrated into the system-on-chip (SoC) circuit. For the competition of lower cost and high integration in marketing concern, CMOS technology is fundamentally better than GaAs technology. We adopt the Advanced Design System software in circuit simulation comingfrom Agilent Company through the Chip Implementation Center (CIC) channel plus TSMC 0.18 μm device models. The simulation results with temperature effect, show the good performance such as an output power achievement of +22dBm under a 1.8V supply voltage;the power-added efficiency (PAE) is over 30％; the output impedance (S22) and the input impedance (S11) are fully lower than -15dB; the power gain (S21) is +11dB; the inverse isolation (S12) is below -26dB. This amplifier reaches its 1-dB compression point at an output level of16.5dBm related to the input power 6.5dBm position. The output power with temperature variation from 0 o C to 125 o C depicts an acceptable spec. range, too.
class-E power amplifier CMOS ISM SoC
Mu-Chun Wang Zhen-Ying Hsieh Chieu-Ying Hsu Shuang-Yuan Chen Heng-Sheng Huang
Graduate Institute of Mechatronic Engineering, National Taipei University of Technology No. 1, Sec. Graduate Institute of Mechatronic Engineering, National Taipei University of Technology No. 1, Sec. Dept. of Electronic Engineering, Ming Hsin University of Science & Technology No. 1 Hsin-Hsing Road,
国际会议
海南三亚
英文
2007-01-10（万方平台首次上网日期，不代表论文的发表时间）