会议专题

A 5.8GHz Band-Pass Filter with an Active Inductor through 0.18 μm Full-CMOS Process for Wireless Transceivers

Substituting the active inductor for the passive inductor to integrate the 5.8GHz bandpass filter into a system-on-chip (SoC) circuit is a feasible solution to reduce the filter chip area, increasing the application competition. The bandpass filter circuit in simulation with TSMC 0.18um CMOS process models and Agilent simulation software exhibits the good performance such as an input return loss (S11) of -34.26dB, an output return loss (S22) of -17.49dB, a bandpass gain (S21) of –4.33dB, a noise figure (NF) of 18.91dB, a 1-dB compressionpoint (P1dB) of -23dBm, a third-order intercept point (IIP3) of -15.83dBm, and the power dissipation in 19.44mW under 1.8V power-supply operation. In addition, the 3-dB bandpass bandwidth is 300MHz. The final dimension of this chip is approximate to 680×530 μm 2 .

RF IC active inductor spiral inductor quality factor NF bandpass filter

Mu-Chun Wang Zhen-Ying Hsieh Cheng-Yi Ke Shuang-Yuan Chen Heng-Sheng Huang

Graduate Institute of Mechatronic Engineering, National Taipei University of Technology No. 1, Sec. Graduate Institute of Mechatronic Engineering, National Taipei University of Technology No. 1, Sec. Dept. of Electronic Engineering, Ming Hsin University of Science & Technology No. 1 Hsin-Hsing Road,

国际会议

2007年微纳系统集成及其商业化应用国际学术会议(2007 International Conference & Exhibition on Integration and Commercialization of Micro and Nano-Systems)

海南三亚

英文

2007-01-10(万方平台首次上网日期,不代表论文的发表时间)