FABRICATION AND TEST OF PECVD SIC RESONATOR

摘要：

This paper utilized SiC thin film deposited by low temperature PECVD to fabricate resonator at 300 ℃,following by annealing and doping to release its stress and improve its electronics contact. The test results show that, the frequency of PECVD SiC resonator is among 60-150KHz. The Q value of resonator was estimated according to the tested frequency- amplitude curve, is about 10 ±3. The ability of SiC resonatorsin erosion environment was also studied, under 5mins etching in KOH solution, the whole structure are kept very well. Therefore, this kind PECVD SiC resonator not only can be used widely in harsh environment, such as, high temperature, erosion and high pressure, but also can integrated with CMOS process, release the integration manufacturing of circuit and devices in micro-scale.

作者: Yu WANG Hui GUO Haixia ZHANG Guobing ZHANG Zhihong LI

作者单位: Institute of Microelectronics,Peking University Institute of Microelectronics, Peking Microelectronics, Peking University Institute of Microelectronics, Peking University

会议类型: 国际会议

会议名称: 2007年微纳系统集成及其商业化应用国际学术会议(2007 International Conference & Exhibition on Integration and Commercialization of Micro and Nano-Systems)

会议地点: 海南三亚

会议语种:英文

在线出版日期: 2007-01-10（万方平台首次上网日期，不代表论文的发表时间）